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Search: "[ keyword: Insulated-gate bipolar transistor modeling ]" (1)
Improved Circuit Model for Simulating IGBT Switching Transients in VSCs
Naushath Mohamed Haleem  Athula D. Rajapakse  Aniruddha M. Gole
Vol. 18, No. 6, pp. 1901-1911, Nov. 2018
10.6113/JPE.2018.18.6.1901

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  ISSN : 1598 - 2092
eISSN : 2093 - 4718